Low Threshold Current DR Laser with Wirelike Active Regions and Integration of EAM with High Electrical Isolation
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概要
- 論文の詳細を見る
A sub-mA threshold current operation of a distributed reflector (DR) laser with wirelike active DFB section and passive DBR section was realized at room temperature continuous wave (RT-CW) condition. To monolithically integrate other photonic devices with the DR laser, a very high electrical isolation resistance of 60 MΩ has been achieved by a deep (3.8μm) and narrow (0.5μm) groove etching while keeping moderately high optical transmitivity of about 93%.
- 社団法人電子情報通信学会の論文
- 2006-12-01
著者
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Arai Shigehisa
Tokyo Inst. Of Technol. Tokyo Jpn
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Arai Shigehisa
Jst‐crest Saitama Jpn
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Ullah Saeed
Tokyo Inst. Of Technol. Tokyo Jpn
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Lee Seung-hun
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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ARAI Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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ULLAH Saeed
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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SUEMITSU Ryo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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OTAKE Masato
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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Otake Masato
Tokyo Inst. Of Technol. Tokyo Jpn
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Suemitsu Ryo
Tokyo Inst. Of Technol. Tokyo Jpn
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Otake Masato
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Suemitsu Ryo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishiyama Nobuhiko
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology:department Of Electrical And E
関連論文
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- Low Threshold Current DR Laser with Wirelike Active Regions and Integration of EAM with High Electrical Isolation
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