Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions
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概要
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The spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser were studied under various collector–base voltages and emitter currents. The result shows that the peak wavelength shifts as a function of the output power resulting from voltage and current controls exhibited contrasting behavior under a continuous-wave operation.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Sato Noriaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Yukinari Masashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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