Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
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概要
- 論文の詳細を見る
A lateral junction waveguide-type GaInAsP/InP photodetector was fabricated on a semi-insulating InP substrate by two-step organometallic vapor-phase epitaxy (OMVPE) regrowth. Responsivities of 0.9 A/W at 1500 nm and 0.27 A/W at 1550 nm were obtained. A 3-dB bandwidth of 6 GHz and 6-Gbps error-free operation under non-bias conditions were achieved with a stripe width of 1.4 μm and a device length of 220 μm.
- 2011-02-25
著者
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雨宮 智宏
東京大学先端科学技術研究センター
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雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Kondo Daisuke
Department Of Chemical Reaction Engineering Nagoya City University
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Lee SeungHun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ito Hitomi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kondo Daisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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