Effect of the Low-Temperature Annealing on Zn-Doped Indium--Tin-Oxide Films for Silicon Heterojunction Solar Cells

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概要

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• The effects of the low-temperature annealing on Zn-doped indium--tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of \text{Zn}/(\text{In}+\text{Zn}) of 6.8 at. % had the resistivity of 4\times 10^{-4} \Omega cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

• 2012-10-25

著者

• Lee Jong-han

  Department Of Engineering Toyota Technological Institute

• Kim Chan

  Department Of Cardiology College Of Medicine Seoul St Mary's Hospital The Catholic University O

• Kim Donghwan

  Department of Material Science and Engineering, College of Engineering, Korea University, Seoul 136-713, Korea

• Lee Jeong

  Photovoltaic Research Group, Korea Institute of Energy Research, Daejeon 305-343, Korea

• Kim Won

  Electronic Materials Center, Korea Institute of Science and Technology, Seoul 130-650, Korea

• Lee Seunghun

  Department of Materials Science and Engineering, Korea University, Seoul 137-713, Korea

• Tark Sung

  Department of Materials Science and Engineering, Korea University, Seoul 137-713, Korea

• Choi Suyoung

  Department of Materials Science and Engineering, Korea University, Seoul 137-713, Korea

• Lee SeungHun

  Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

• Kim Chan

  Department of Materials Science and Engineering, Korea University, Seoul 137-713, Korea

• Lee Jong-Han

  Department of Materials Science and Engineering, Korea University, Seoul 137-713, Korea

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