Surface Modification of High Haze Front Transparent Conductive Oxide for Silicon Thin Film Solar Cell

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概要

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• The aluminium-doped zinc oxide (ZnO:Al) films grown by sputtering method were etched to improve the light scattering property. The high haze value (diffuse transmission to total transmission) of above 40% at 850 nm wavelength was obtained by the increase of etching time. But the resistance of film increased and a lot of pin holes were created due to the over etch for high haze. In order to solve these problems, the additional ZnO layer was deposited on etched ZnO:Al film without sacrifice of high haze. This method was able to compensate the deteriorated properties without the change of optical properties. Amorphous based silicon solar cells showed the improvement of photovoltaic performances by the additional deposition.

• 2012-10-25

著者

• Lee Heon-Min

  Emerging Technology Laboratory, LG Electronics Advanced Research Institute, Seoul 137-724, Korea

• Kim Sun

  Emerging Technology Laboratory, LG Electronics Advanced Research Institute, Seoul 137-724, Korea

• You Dong

  Emerging Technology Laboratory, LG Electronics Advanced Research Institute, Seoul 137-724, Korea

• Park Jin

  Emerging Technology Laboratory, LG Electronics Advanced Research Institute, Seoul 137-724, Korea

• Lee Sung

  Emerging Technology Laboratory, LG Electronics Advanced Research Institute, Seoul 137-724, Korea

• Kim Donghwan

  Department of Material Science and Engineering, College of Engineering, Korea University, Seoul 136-713, Korea

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• Surface Modification of High Haze Front Transparent Conductive Oxide for Silicon Thin Film Solar Cell
• Effect of the Low-Temperature Annealing on Zn-Doped Indium--Tin-Oxide Films for Silicon Heterojunction Solar Cells
• Origin of Nonlinear Optical Characteristics of Crystalline Ge–Sb–Te Thin Films for Possible Superresolution Effects

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