Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
スポンサーリンク
概要
- 論文の詳細を見る
The effect of <i>in-situ</i> thermal cleaning on the regrowth interface quality of 1.3 μm AlGaInAs/InP buried-heterostructure lasers prepared by organo-metallic vapor-phase epitaxy (OMVPE) was investigated. It was proven that the regrowth interface quality can be quantitatively evaluated on the basis of the surface recombination velocity determined from the electroluminescence property below the threshold, and the tendency of the characteristics agreed with the lasing properties. As a result of a successful operation with the stripe width of 3.6 μm, treated by the thermal cleaning process at a temperature of 450 °C for 30--60 min in a PH<sub>3</sub> atmosphere, an internal quantum efficiency of approximately 70% was achieved.
- 2011-07-25
著者
-
雨宮 智宏
東京大学先端科学技術研究センター
-
雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
-
Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
-
Sato Takashi
Department Of Applied Biochemistry And Food Science Saga University
-
Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
-
Amemiya Tomohiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Takino Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Shirao Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
TAKINO Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
SHIRAO Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
関連論文
- Anaplastic Ganglioglioma With Malignant Features in Both Neuronal and Glial Components : Case Report
- Anti-arthritic Action Mechanisms of Natural Chondroitin Sulfate in Human Articular Chondrocytes and Synovial Fibroblasts
- 失神を繰り返した左冠動脈起始異常による心筋梗塞の1男児例
- Diagnosis supporting algorithm for lymph node metastases from colorectal carcinoma on ^F-FDG PET/CT
- The Citrus Flavonoid, Nobiletin, Inhibits Peritoneal Dissemination of Human Gastric Carcinoma in SCID Mice
- Nobiletin (citrus flavonoid) inhibits the production of MMP-9 and peritoneal metastasis of gastric carcinoma in SCID mice
- Group IVA Phospholipase A_2-Associated Production of MMP-9 in Macrophages and Formation of Atherosclerotic Lesions(Highlighted paper selected By Editor-in-chief,Biochemistry)
- Inhibition of Cytosolic Phospholipase A_2 Suppresses Production of Cholesteryl Ester through the Reesterification of Free Cholesterol but not Formation of Foam Cells in Oxidized LDL-Stimulated Macrophages(Highlighted paper selected by Editor-in-chief,Bioc
- CS-8-10 非相反損失変化に基づく集積化可能な導波路型光アイソレータ(CS-8. ナノスケール光集積回路技術の展望, エレクトロニクス1)
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- An anthropomorphic pelvis phantom for optimization of the diagnosis of lymph node metastases in the pelvis
- Improvement of the diagnostic accuracy of lymph node metastases of colorectal cancer in ^F-FDG-PET/CT by optimizing the iteration number for the image reconstruction
- C-3-69 導波路型アイソレータのための非相反偏波コンバータの提案(パッシブデバイス,C-3.光エレクトロニクス,一般講演)
- 強磁性MnAsによる非相反損失にもとづくTMモード導波路型光アイソレータ(光パッシブコンポーネント(フィルタ,コネクタ、MEMS)・光ファイバ、一般)
- 強磁性MnAsによる非相反損失にもとづくTMモード導波路型光アイソレータ
- InGaAs/InAlAs二重結合量子井戸を用いた小型・低電圧電気光学位相変調器(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般)
- InGaAs/InAlAs二重結合量子井戸を用いた小型・低電圧電気光学位相変調器(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般)
- TLR3 induction by anticancer drugs potentiates poly I:C-induced tumor cell apoptosis
- EFFECT OF DRUGS ON CONCANAVALIN A-INDUCED PLATELET ACTIVATION
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- A Case of Vertebral Artery Dissection Associated with Morning Blood Pressure Surge
- Ce:YIGを有するInGaAsP/InP非対称導波路からなる非相反偏波コンバータ(半導体レーザ関連技術,及び一般)
- Glucose Uptake in Rat Skeletal Muscle L6 Cells Is Increased by Low-Intensity Electrical Current Through the Activation of the Phosphatidylinositol-3-OH Kinase (PI-3K) / Akt Pathway
- MEK1/2 and PKC β II/ε Are Target Molecules for Nobiletin-Induced Suppression of ProMMP Production and Augmentation of TIMP-1 Production in HT-1080 Cells
- Synthesis, Structure, and Properties of Polyacetylenes Possessing Chiral Spirobifluorene Moieties in the Side Chain
- Synthesis of acetylene-functionalized [2]rotaxane monomers directed toward side chain-type polyrotaxanes
- PHYSIO-HISTOLOGICAL STUDIES ON THE PHYSIOLOGICAL OBESITY OF MEAT PIGS, (REPORT IX), ESPECIALLY ON THE OCCURRENCE OF GLYCOGEN WITHIN THE NUCLEI AND CYTOPLASMS OF THE ZONA RETICULARIS IN THE ADRENALS OF WILD BOARS AND LANDRACE MEAT PIGS IN COMPARISON WITH T
- Discoordinate Regulation of Expression of Matrix Metalloproteinases and Tissue Inhibitor of Metalloproteinases-3 in Bovine Endometrial Stromal Cells on Type-I Collagen Gel
- Progression of Pericellular Proteolysis by EMMPRIN-bound Active Matrix Metalloproteinase 1 on the Surface of Tumor Cells
- 負の屈折率層を有する導波路型光デバイスの検証 : 金SRRアレイを有するInPベースの1×1MMIにおける透過特性
- 負の屈折率層を有する導波路型光デバイスの検証 : 金SRRアレイを有するInPべースの1×1MMIにおける透過特性(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)
- 負の屈折率層を有する導波路型光デバイスの検証 : 金SRRアレイを有するInPベースの1×1MMIにおける透過特性(フォトニック NW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)
- 負の屈折率層を有する導波路型光デバイスの検証 : 金SRRアレイを有するInPベースの1×1MMIにおける透過特性(フォトニック NW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)
- 光通信帯における左手系光制御素子の設計(光パッシブコンポネント(フィルタ、コネクタ、MEMS),シリコンフォトニクス,光ファイバ,一般)
- メタフォトニクス素子--導波路型光デバイスにおける透磁率制御の可能性 (フォトニックネットワーク)
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- C-4-17 細線状活性層を有する分布反射型レーザの変調帯域拡大と10Gbit/s低消費電力動作(C-4.レーザ・量子エレクトロニクス,一般セッション)
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 負の屈折率層を有する導波路型光デバイスの検証 : 金SRRアレイを有するInPベースの1×1MMIにおける透過特性
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- a-Si表面回折格子を有する1550nm波長帯横方向電流注入型DFBレーザ(半導体レーザ関連技術,及び一般)
- メタフォトニクス素子 : 導波路型光デバイスにおける透磁率制御の可能性(フォトニックネットワーク関連技術,一般)
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- C-4-27 金属側壁層を有するプラズモニックDFBレーザの理論解析(C-4.レーザ・量子エレクトロニクス,一般セッション)
- CS-2-5 メタマテリアルを有するInP系マッハツェンダー導波路における透磁率変化の推定(CS-2.メタマテリアル技術の最新動向-材料設計から実用化に向けた取組まで-,シンポジウムセッション)
- C-3-49 BCB埋め込み温度無依存SiスロットMZI型波長フィルタの高速信号伝送(シリコンフォトニクス,C-3.光エレクトロニクス,一般セッション)
- CI-3-6 オンチップ光通信に向けたInP/Si貼り付け技術とその光デバイス特性(CI-3.接合技術を用いた新規集積光デバイス,依頼シンポジウム,ソサイエティ企画)
- 細線状活性層を有する低消費電力分布反射型レーザの広変調帯域(>25Gbit/s)動作(アクティブデバイスと集積化技術、一般「材料デバイスサマーミーティング」)
- 細線状活性層を有する低消費電力分布反射型レーザの広変調帯域(>25Gbit/s)動作(アクティブデバイスと集積化技術、一般「材料デバイスサマーミーティング」)
- C-4-17 横方向電流注入型半導体薄膜レーザの直接変調帯域の検討(C-4.レーザ・量子エレクトロニクス,一般セッション)
- C-3-91 金属側壁層を有するInP系プラズモニック導波路の作製評価(C-3.光エレクトロニクス,一般セッション)
- C-3-39 温度無依存BCB埋め込みSiスロットリング共振器を用いたドロップフィルタ(C-3.光エレクトロニクス,一般セッション)
- C-3-38 多層アモルファスシリコン細線導波路間の信号伝送用グレーティングカプラ(C-3.光エレクトロニクス,一般セッション)
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- C-3-59 金属ミラー付き多層アモルファスシリコン細線導波路間のグレーティングカプラ(シリコンフォトニクス,C-3.光エレクトロニクス,一般セッション)
- C-4-15 GaInAsP横方向接合型薄膜フォトダイオードの特性評価(C-4.レーザ・量子エレクトロニクス,一般セッション)
- GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析(光部品・電子デバイス実装技術・信頼性,及び一般)
- GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析(光部品・電子デバイス実装技術・信頼性,及び一般)
- GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析(光部品・電子デバイス実装技術・信頼性,及び一般)
- GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析(光部品・電子デバイス実装技術・信頼性,及び一般)
- GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析(光部品・電子デバイス実装技術・信頼性,及び一般)
- GaInAsP/InP横方向電流注入型半導体薄膜レーザの低しきい値動作化(半導体レーザ関連技術,及び一般)