NISHIYAMA Nobuhiko | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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概要
- Nishiyama Nobuhikoの詳細を見る
- 同名の論文著者
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technologyの論文著者
関連著者
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NISHIYAMA Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Arai Shigehisa
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Ullah Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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SHIRAO Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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雨宮 智宏
東京大学先端科学技術研究センター
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雨宮 智宏
東京工業大学 量子ナノエレクトロニクス研究センター
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Suemitsu Ryo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Amemiya Tomohiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Atsumi Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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TAKINO Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Lee Jieun
Department Of Chemical Engineering Sungkyunkwan University
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Otake Masato
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Nishimoto Yoshifumi
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Inoue Keita
Department Of Computer Science School Of Electrical And Computer Engineering National Defense Agency
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Sato Takashi
Department Of Applied Biochemistry And Food Science Saga University
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Lee SeungHun
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Okumura Tadashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ito Hitomi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Amemiya Tomohiro
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Takino Yuta
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Naitoh Hideyuki
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sakamoto Shinichi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ohtake Mamoru
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Arai Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Koguchi Takayuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Sato Noriaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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PLUMWONGROT Dhanorm
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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Oda Manabu
Department Of Geriatric Pharmacology And Therapeutics Graduate School Of Pharmaceutical Sciences Chi
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Kondo Daisuke
Department Of Chemical Reaction Engineering Nagoya City University
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Sato Noriaki
Department Of Electronics Faculty Of Engineering Nagoya University
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Sakamoto Shinichi
Department Of Electrical Engineering Yamanashi University
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Lee Seung
Quantum-functional Semiconductor Research Center Dongguk University
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Numajiri Yuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Tamura Yosuke
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Kurokawa Munetaka
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Lee SeungHun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Shirao Mizuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Nobuhiko Nishiyama
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kang JoonHyun
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Shigehisa Arai
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Nishiyama Nobuhiko
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Yokoyama Ryo
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Maeda Yasuna
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Sigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kondo Daisuke
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Shigehisa
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Plumwongrot Dhanorm
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Enomoto Haruki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Tamura Shigeo
Technical Department, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Maruyama Takeo
School of Electrical and Computer Engineering, College of Science and Engineering, Kanazawa University, Kanazawa 920-1192, Japan
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Otake Masato
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ullah Saeed
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sakamoto Shinichi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Keita Inoue
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Inoue Keita
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Manabu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Suemitsu Ryo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Asada Masahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Osabe Ryo
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kondo Simon
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Maruyama Takeo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan
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Okumura Tadashi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Shindo Takahiko
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Futami Mitsuaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Doi Kyouhei
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Yamahara Yoshiyuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Yukinari Masashi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
著作論文
- Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions
- Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure
- Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells
- Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits
- GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect
- 85 °C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer
- Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions
- Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm
- Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Narrow Groove
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- 10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes
- Theoretical analysis of the damping effect on a transistor laser
- Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions