Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
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概要
- 論文の詳細を見る
CdF2/CaF2 resonant tunneling diode (RTD) structures of 100 nm diameter were fabricated in SiO2 hole arrays formed on Si(100) substrates. RTD structures were grown by molecular beam epitaxy (MBE) in SiO2 hole arrays. After the growth of the initial CaF2 layer at a substrate temperature of 120 °C, in situ annealing at 500 °C was carried out to reduce the density of defects or pinholes in the barrier layer. In the measurement of current–voltage ($I$–$V$) characteristics, negative differential resistance (NDR) was clearly demonstrated at room temperature. The peak-to-valley current ratio (PVCR) was $10^{6}$. The valley current was significantly suppressed. Results obtained here strongly indicates that the RTD structures proposed in this study are promising for high-quality NDR elements compatible with Si LSI technology based on Si(100) substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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Suzuki Yusuke
Department Of Biological Production Akita Prefectural University
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Fujii Ryo
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Morosawa Atsushi
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Wada Takafumi
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Asada Masahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Kanazawa Tohru
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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