Resistance Switching Memory Characteristics of Si/CaF₂/CdF₂ Quantum-Well Structures Grown on Metal (CoSi₂) Layer (Special Issue : Solid State Devices and Materials)
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概要
著者
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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Denda Junya
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Uryu Kazuya
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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