Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate
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概要
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The epitaxial growth of BeZnSe on a GaP(001) substrate has been demonstrated using migration enhanced epitaxy (MEE), in which the group-II materials (Be, Zn) and Se were irradiated on a substrate by turns, in order to improve the crystalline quality of the epilayer. As a result, in the photoluminescence (PL) measurements, the full-width at half-maximum (FWHM) value of the BeZnSe epilayer grown by molecular beam epitaxy (MBE) with a buffer layer (BL) grown by MEE was 56 meV at 13 K, and 82 meV at room temperature. The etch pit density (EPD) of the oval-type pits was $3.0 \times 10^{7}$ cm-2, and no small-type pits were observed. These results were obtained by reducing the number of stacking faults and/or perfect dislocations in the initial growth stage of MEE.
- 2005-02-01
著者
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Niiyama Yuuki
Department Of Information Processing Tokyo Institute Of Technology
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Yokoyama Takeshi
Department Of Anesthesiology And Critical Care Medicine Kochi Medical School
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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Murata Tomoyuki
Department of Information Processing, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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