Room-Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001) : Semiconductors
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概要
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Single crystalline Be_xZn_<1-x>Se was epitaxially grown on GaP(001) with beryllium (Be) content of 34-55% using molecular beam epitaxy (MBE). From the sample of high Be content, Be_<0.55>Zn_<0.45>Se, ultraviolet photoluminescence (PL) emission was observed at a wavelength of 346 nm at room-temperature, and the full-width at half maximum (FWHM) (ω scan (004)) was 461 arcsec as determined by X-ray diffraction (XRD).
- 社団法人応用物理学会の論文
- 2002-07-01
著者
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NAKAMURA Naoto
Department of Information Processing, Tokyo Institute of Technology
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Nakamura Naoto
Department Of Endocrinology And Metabolism Kyoto Prefectural University Of Medicine Graduate School
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Maruyama Takeo
Department Of Information Processing Tokyo Institute Of Technology
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Maruyama Takeo
Department Of Electrical And Electronic Engineering Faculty Of Engineering Niigata University
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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NIIYAMA Yuuki
Department of Information Processing, Tokyo Institute of Technology
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NAKAYAMA Naoto
Department of Information Processing, Tokyo Institute of Technology
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Niiyama Yuuki
Department Of Information Processing Tokyo Institute Of Technology
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Nakayama Naoto
Department Of Information Processing Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Information Processing Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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