Reduction of Electrical Resistance of Nanometer-Thick CoSi 2 Film on CaF 2 by Pseudomorphic Growth of CaF 2 on Si(111)
スポンサーリンク
概要
- 論文の詳細を見る
1.9-nm-thick epitaxial metal (CoSi2) films were grown on relaxed or pseudomorphic CaF2/Si(111) and their electrical resistance was measured. It was found that the electrical resistance of the CoSi2 film on pseudomorphic CaF2 was about half of that on relaxed CaF2. This result can be attributed to the improved of flatness and crystalline quality of the CoSi2 by using of pseudomorphic CaF2 instead of relaxed CaF2 due to the flat pseudomorphic CaF2 surface and the small lattice mismatch between CoSi2 and pseudomorphic CaF2.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-07-15
著者
-
Sugiura Hidekazu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Mori Kaoru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Saitoh Wataru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Maruyama Takeo
Department Of Electrical And Electronic Engineering Faculty Of Engineering Niigata University
-
Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Sugiura Hidekazu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
-
Saitoh Wataru
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
-
Mori Kaoru
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
-
Asada Masahiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
関連論文
- Cervical Epidural Abscess Presenting with Brown-Sequard Syndrome in a Patient with Type 2 Diabetes
- The characteristics of relapse in adult-onset minimal-change nephrotic syndrome
- Anti-Glomerular Basement Membrane Antibody Disease with Granulomatous Lesions on Renal Biopsy
- Successful Use of Single-Dose Rituximab for the Maintenance of Remission in a Patient with Steroid-Resistant Nephrotic Syndrome
- Risk Factors for Progression in Patients with Early-stage Chronic Kidney Disease in the Japanese Population
- Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
- Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
- Emission Energy Shift in GaInAs/GaInAsP Strained Quantum-Box Structures Due to 0-Dimensional Quantum-Box Effect
- Risedronate Therapy for the Prevention of Steroid-induced Osteoporosis in Patients with Minimal-change Nephrotic Syndrome
- Entropy-based Assessments of Monthly Rainfall Variability
- Cerebellopontine Angle Ependymoma with Internal Auditory Canal Enlargement and Pineal Extension : Case Report
- Subependymoma in the Lateral Ventricle Incidentally Detected by Routine Brain Examination : Case Report
- Reduction of Electrical Resistance of Nanometer-Thick CoSi_2 Film on CaF_2 by Pseudomorphic Growth of CaF_2 on Si(111)
- Metal (CoSi_2)/Insulator (CaF_2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
- Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi_2)/Insulator (CaF_2) Heterostructures and Influence of Parasitic Circuit Elements
- Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
- Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
- Dependence of Energy Gap on x in CuAl_xGa_S_2 Mixed Crystal System : Semiconductors and Semiconductor Devices
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Entropy-based Assessments of Monthly Rainfall Variability
- GIS-Aided Zoning of Natural Groundwater Recharge Potential in Yasu River Basin, Japan
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Advantage of Strained Quantum Wire Lasers
- Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
- 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
- Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate
- Frequency Stabilizatiorn of a Semiconductor Laser under Direct Frequency Shift Keying Using the Saturated Absorption Signal
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Resonant Tunneling Diodes in Si/CaF_2 Heterostructures Grown by Molecular Beam Epitaxy
- Theoretical Gain of Quantum-Well Wire Lasers
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transister on Separation-by-Implanted-Oxygen Substrate
- Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor
- Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Entropy Aspects of Runoff and Flow Regulations in a River Basin
- Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
- Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
- Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Reflection High-Energy Electron Diffraction Oscillation during CaF_2 Growth on Si(111) by Partially Ionized Beam Epitaxy
- Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF_2/Si(111)
- Epitaxial Growth and Ultraviolet Photoluminescence of CaF_2/ZnO/CaF_2 Heterostructures on Si(111)
- CaF_2/CdF_2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
- Negative Differential Resistance of CaF_2/CdF_2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
- Room-Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001) : Semiconductors
- Evaluation of Rainfall Characteristics Using Entropy
- Postpartum subarachnoid hemorrhage due to Moyamoya disease associated with renal artery stenosis
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Intergrated with Patch Antenna
- Terahertz Response with Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes
- Clinical effects of calcium channel blockers and renin-angiotensin-aldosterone system inhibitors on changes in the estimated glomerular filtration rate in patients with polycystic kidney disease
- Ruptured Arterial Aneurysm of the Kidney in a Patient with Microscopic Polyangiitis
- Study on Optimal Fat Content in Total Parenteral Nutrition in Partially Hepatectomized Rats
- Formation of Silicon and Cobalt Silicide Nanoparticles in CaF_2
- Effect of the antiplatelet agent cilostazol on endovascular inflammatory biochemical parameters and the clinical symptoms of peripheral artery disease and restless legs syndrome in hemodialysis patients
- Circulating levels of soluble α-Klotho in patients with chronic kidney disease
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Reduction of Electrical Resistance of Nanometer-Thick CoSi 2 Film on CaF 2 by Pseudomorphic Growth of CaF 2 on Si(111)
- Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Optical Properties near the Fundamental Edge of an AgGaS2 Single Crystal
- 1,1'-(1,32-Dotriacontanediyl)bis(2-acetyl-sn-glycero(3)phosphocholine): A long persisting agonist as a potential antihypertension agent.
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Integrated with Patch Antenna
- Spectral Characteristics of Linewidth Enhancement Factor $\alpha$ of Multidimensional Quantum Wells
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate