CaF_2/CdF_2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
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概要
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We have demonstrated room-temperature negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) on the order of 10^5 using CaF_2/CdF_2 double-barrier resonant tunneling diode (DBRTD) structures grown on Si(111) substrates. A CdF_2 quantum-well layer was grown by molecular-beam epitaxy (MBE) and CaF_2 barrier layers were formed by MBE combined with the partially ionized beam technique on an n^+-Si(111) substrate with 0.07° miscut, in order to reduce the pinhole density of CaF_2 barrier layers. The dispersion of the peak current density and bias voltage of the NDR implies that the layer thickness fluctuation of each CaF_2 barrier and CdF_2 quantum-well layer is suppressed below ±1 unit layer of the (111)atomic plane for DBRTDs with an 18 μm diameter electrode. The peak and valley currents agrred reasonably with those obtained by theoretical estimation.
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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渡辺 正裕
東京工業大学大学院総合理工学研究科
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Watanabe M
Nec Corp. Ibaraki Jpn
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FUNAYAMA Toshiyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TERAJI Taishi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SAKAMAKI Naoto
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Teraji Taishi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Sakamaki Naoto
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Funayama Toshiyuki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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