Development of a Tunable 209 nm Continuous-Wave Light Source Using Two-Stage Frequency Doubling of a Ti : Sapphire Laser(Optics and Quantum Electronics)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
-
渡辺 正裕
東京工業大学大学院総合理工学研究科
-
TOYODA Kenji
Graduate School of Engineering Science, Osaka University
-
URABE Shinji
Graduate School of Engineering Science, Osaka University
-
Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
-
Toyoda Kenji
Graduate School Of Engineering Science Osaka University
-
Urabe S
Osaka Univ. Osaka Jpn
-
Urabe Shinji
Department Of Physical Science Osaka University
-
Urabe Shinji
Graduate School Of Engineering Science Osaka University
-
Matsubara Kazuo
Kobelco Research Institute Inc.
-
Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
-
Watanabe M
Nec Corp. Ibaraki Jpn
-
WATANABE Masayoshi
Kansai Advanced Research Center, National Institute of Information and Communications Technology
-
Toyoda K
Science University Of Tokyo
-
Matsubara K
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
-
Matsubara Koji
Kansai Advanced Research Center Communications Research Laboratory
-
Yamamoto Hiroshi
Graduate School of Science and Engineering, Tokyo Institute of Technology
-
MATSUBARA Kensuke
Kansai Advanced Research Center, Communications Research Laboratory
-
Watanabe Masayoshi
Kansai Advanced Research Center Communications Research Laboratory
-
Yamamoto H
Graduate School Of Engineering Science Osaka University
-
Yamamoto Hiroshi
Graduate School Of Environmental Science Hokkaido University
-
Yamamoto Hiroshi
Graduate School Of Engineering Utsunomiya University
-
渡辺 正裕
東京工業大学大学院総合理工学研究科:独立行政法人科学技術振興機構SORST
-
Yamamoto Hiroshi
Graduate School of Engineering Science, Osaka University
関連論文
- Optimization of Doppler Cooling of a Single ^Ca^+ Ion
- Si基板上弗化物系サブバンド間遷移レーザの理論解析
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- Si基板上弗化物系サブバンド間遷移レーザの理論解析(シリコン系量子効果デバイス,量子効果デバイス及び関連技術)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード(光・電子ナノデバイス)
- Si基板上(CdF_2/CaF_2)サブバンド間遷移レーザ構造のEL発光特性(光・電子ナノデバイス)
- Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate (Special Issue: Solid State Devices & Materials)
- Room Temperature Electroluminescence of CdF_2/CaF_2 Inter-subband Transition Laser Structures grown on Si Substrate
- ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
- ローカルエピタキシー法によるCoSi_2/CaF_2三重障壁共鳴トンネルダイオードの微分負性抵抗特性(量子効果デバイス及び関連技術)
- Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
- Si(100)基板上に形成されたCdF_2/CaF_2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性(量子効果デバイス及び関連技術)
- ローカルエピタキシー法により形成されたシリコン基板上CdF_2/CaF_2共鳴トンネルダイオード微分負性抵抗特性の構造依存性
- ローカルエピタキシー法により形成されたシリコン基板上CdF_2/CaF_2共鳴トンネルダイオード微分負性抵抗特性の構造依存性
- Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
- ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード
- ナノ領域成長によるSi(111)及びSi(100)基板上CdF_2/CaF_2共鳴トンネルダイオード
- Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
- Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
- エピタキシャルCaF_2を用いたMIS電子トンネルエミッタのエミッション電流安定化およびta-Cによる電子放出閾価電圧の低下
- Si-CaF_2及びCdF_2-CaF_2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード
- Si-CaF_2及びCdF_2-CaF_2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード
- Si基板上Si/CdF_2量子井戸構造を用いた電界効果型量子効果デバイス
- Si基板上Si/CdF_2量子井戸構造を用いた電界効果型量子効果デバイス
- Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile
- Direct Measurement of Sheath Electric Field Distribution in Front of Substrate in Electron Cyclotron Resonance Plasma by Laser-Induced Fluorescence Technique
- Two-Dimensional Measurement of He Metastable Atom Density Profile in Front of Substrate in Electron Cyclotron Resonance Plasma Flow by Laser-Induced Fluorescence Spectroscopy
- Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Characteristics of Cavity Round-Trip Time Pulses in Short-Cavity Q-Switched AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- 『マイクロ波シミュレータの基礎』, 山下榮吉(監修), 電子情報通信学会, 2004-03, A5判, 定価(本体5,000円+税)
- Effect of Pulse Duration on Ablation Characteristics of Tetrafluoroethylene-hexafluoropropylene Copolymer Film Using Ti:sapphire Laser
- Crystal Growth of Nd:YAG Laser Films on Various Substrates by Pulsed Laser Deposition
- Fabrication of Multilayers with Growth Controlled by Sequential Surface Chemical Reactions
- Comparative Study of Al_2O_3 Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH_3)_3/N_2O and Al(CH_3)_3/H_2O_2
- Dot Structures Fabricated by Laser Etching : Laser Wavelength Dependence of Dot Structures Fabricated by Laser Etching
- Spatial Controllability of Periodic Ripple Structures Generated in Laser Etching of n-GaAs
- Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
- Electrical Insulation Properties of Carbon-Corntrolled Semi-Insulating GaAs
- Influence of Boron in Semi-insulating GaAs Crystals on Their Electrical Activation by Si-Ion Implantation
- Degradation of Activation on Si-Implanted GaAs Crystal Wafers by Mechanical Surface Damages
- シリコン基板上に形成した金属/絶縁体量子効果デバイス
- 金属(CoSi_2)/絶縁体(CaF_2)/Siヘテロ接合量子効果デバイス
- 金属/絶縁体ヘテロ接合電子デバイス
- A Radio Frequency Driven DC Electron Beam Source
- Ferrite Core Effects in a 13.56 MHz Inductively Coupled Plasma
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- A Compact 209-nm Deep UV cw Light Source for Spectroscopy Using Frequency Doubling of a Diode Laser
- Motional Resonances of Sympathetically Cooled ^Ca^+, Zn^+, or Ga^+ Ions in a Linear Paul Trap : Atoms, Molecules, and Chemical Physics
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Ring-Type Ti:sapphire Regenerative Amplifier with a Wide Tuning Range
- Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force
- Three-Dimensional Simulation of Silicon Melt Flow in Electromagnetic Czochralski Crystal Growth
- Microwave Dielectric Properties of Sm_2Ba(Cu_Zn_x)O_5(x = 0 to 1) Solid Solutions
- Microwave Dielectric Properties of Y_2Ba(Cu_Zn_x)O_5 Solid Solutions
- Phototransistors Using Point Contact Structures
- Micropatterning of Quartz Substrates by Multi-Wavelength Vacuum-Ultraviolet Laser Ablation
- Size Effect on the Phase Transition in PbTiO_3 Fine Particles
- Initial Stage of Growth Process of Lead Titanate Fine Particles ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
- Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
- Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Vacuum-ultraviolet laser induced surface modification of fused quartz
- Ablation of Fused Quartz by Ultraviolet, Visible or Infrared Laser Coupled with VUV Laser
- Terahertz Wave Generations from Multi-Quantum Well with Transverse Electric Field
- Development of a Tunable 209 nm Continuous-Wave Light Source Using Two-Stage Frequency Doubling of a Ti : Sapphire Laser(Optics and Quantum Electronics)
- Crystallization and Growth Process of Lead Titanate Fine Particles from Alkoxide-Prepared Powders
- Ultrafast Coherent Control of Excitons Using Pulse-Shaping Technique
- Manipulation of Coherent Exciton towards Novel Ultrafast Devices
- Submilliwatt Continuous-Wave Coherent Light Generation near 214.5 nm by Two-Stage Frequency Doubling of a Diode Laser
- Motional Resonances of Sympathetically Cooled 44Ca+, Zn+, or Ga+ Ions in a Linear Paul Trap
- Trapping of Ca^+ Ions and Optical Detection
- Laser Cooling of Ca^+ with an External-Cavity Ultraviolet Diode Laser
- Deflection of a Velocity Compressed Yb Atomic Beam by a Multi-Mode Spectral Laser
- Sum-Frequency Generation near 194 nm with an External Cavity by Simultaneous Enhancement of Frequency-Stabilized Fundamental Lasers
- Tunable 397 nm Light Source for Laser Cooling of Ca Ions Based on Frequency Doubling of Diode Laser
- Laser Cooling of Ca^+ Ions and Observation of Collision Effects
- Doppler-Free Optogalvanic Spectroscopy of Ca^+ and Ca
- Measurement of Electrical Characteristics of Stored Be^+ Ions in a Penning Trap
- Epitaxial Growth and Ultraviolet Photoluminescence of CaF_2/ZnO/CaF_2 Heterostructures on Si(111)
- Growth-Temperature Dependence of the Quality of Al_2O_3 Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H_2O_2
- Si Barrier Metal Growth by Hybrid Radical Beam-Pulsed Laser Deposition of TiN
- Characterization of Stainless Steel SUS304 Modified by KrF Excimer Laser Implant-Deposition and Its Properties after the Thermal Treatment
- Growth of epitaxial TiN thin film on Si substrate by pulsed laser deposition(II)
- Growth of epitaxial TiN thin film on Si substrate by pulsed laser deposition(I)
- Rapid Formation of Arsenic-Doped Layer More Than 1.0 μm Deep in Si Using Two KrF Excimer Lasers
- Optimization Method of Memory Characteristics in Antiferroelectric Liquid Crystals
- CaF_2/CdF_2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
- Si(111)上CdF_2-CaF_2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性
- ED2000-56 / SDM2000-56 Si(111)上CdF_2-CaF_2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性
- Negative Differential Resistance of CaF_2/CdF_2 Triple-Barrier Resonant-Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy
- Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method
- Modification of Heat and Mass Transfers and Their Effect on the Crystal-Melt Interface Shape of Si Single Crystal during Czochralski Crystal Growth
- Generation of Bose-Einstein Condensates in a Well Isolated Low-Pressure Vacuum Chamber