Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method

概要

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A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt in the radial direction and a vertical magnetic field (B). The rotation rate (ω_m) of the silicon melt is continuously changed from 0 to over 105 rpm under I=0 to 8 A and B=0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under two conditions: I=2.0 A and B=0.05 T (ω_m=105 rpm); and I=0.2 A and B=0.1 T (ω_m=15 rpm). The oxygen concentration in the crystals was 8×10^<17> atoms/cm^3 for the high rotation rate and 1×10^<17> atoms/cm^3 for the low rotation rate. The oxygen-concentration distributions in the radial direction in both crystals were more homogeneous than those in the crystals grown by conventional CZ and/or MCZ growth. This new crystal-growth method can be easily adopted for growing large-diameter silicon crystals.
社団法人応用物理学会の論文
1999-01-15