Growth-Temperature Dependence of the Quality of Al_2O_3 Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H_2O_2
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概要
- 論文の詳細を見る
Dependence of the quality of thin films of Al_2O_3 on the growth temperature was investigated in the surface reaction limited growth system. It has been found that the density, the chemical bonding strength, and the electrical properties improve significantly with increasing growth temperature althotugh the growth rate remains nearly constant. Also, Fourier transform infrared spectroscopy indicates that hydrogen incorporation into the films is nearly negligible.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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TOYODA Kenji
Graduate School of Engineering Science, Osaka University
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Toyoda Koichi
The Institute of Physical and Chemical Research Wako
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Fan Jia
The Institute Of Physical And Chemical Research (riken)
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Toyoda Koichi
The Institute Of Physical And Chemical Research
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