IKEDA Shunsuke | Department of Energy Sciences, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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IKEDA Shunsuke
Department of Energy Sciences, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Kato Atsushi
Department Of General Surgery Chiba University Graduate School Of Medicine
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Nakajima Mitsuo
Department Of Energy Sciences Interdisciplinary Graduate School Of Science And Engineering Tokyo Ins
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Horioka Kazuhiko
Department Of Energy Sciences Interdisciplinary Graduate School At Suzukakedai Tokyo Institute Of Te
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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Ikeda Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Terao Ryousuke
Department Of Physical Electronics Tokyo Institute Of Technology
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YONAI Yoshiharu
Department of Physical Electronics, Tokyo Institute of Technology
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Hirai Jun
Department Of Applied Physics Graduate School Of Engineering Osaka City University
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Yonai Yoshiharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Kato Atsushi
Department Of Biomass Chemistry Forestry And Forest Products Research Institute
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Kato Atsushi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kato Atsushi
Department Of Biological Science Graduate School Of Life And Environment Science Shimane University
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Kashiwano Masashi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Fujimatsu Motohiko
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
著作論文
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
- Control of Laser Ablation Plasma with Longitudinal Magnetic Field
- High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa (Special Issue : Solid State Devices and Materials)