Taguchi T | Research Laboratories Nippondenso Co. Ltd.

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著作論文

Threshold Current Density in ZnS/MgBeZnS Quantum Well Ultraviolet Lasers
Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
Transient Species Induced in X-ray Chemically Amplified Positive Resists:Post-Exposure Delay Effect
Alternative Interpretation of Impulse Response of Phonon-Polaritons
Excitation of Phonon-Polaritons with Asymmetric Transient Grating
Biexciton Luminescence from GaN Epitaxial Layers
Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
Temperature Dependence of Free-Exciton Ltuninescence from High-Quality ZnS Epitaxial Layers
Optical characterization of high-quality ZnS epitaxial films grown by low-pressure metalorganic chemical vapor deposition
High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
Performance of X-Ray Stepper for Next-Generation Lithography
Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma
Precise Stress Control of Ta Absorber using Low Stress Alumima Etching Mask for X-Ray Mask Fabrication
Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy : Semiconductors
60GHz mixer MMIC for millimeter wave radar
Critical Layer Thickness of n-In_Al_AS/In_Ga_As/In_Al_AS Pseudomorphic Heterostructures Studied by Photoluminescence
Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices
Valence Band Structure and Optical Gain in Cd_xZn_/ZnS Quantum Wells : Short Note

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