Spark Plasma Sintering of AlN Ceramics and Surface Metallization by Refractory Metal of Ti, Nb, Mo, Ta or W at Low Temperature

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概要

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• Aluminum nitride (AlN) powder with no additives was sintered successfully at 1200°C in low-pressure N2 gas using a spark plasma sintering (SPS) process. The density value of the resultant ceramic is as high as 95% of the theoretical one. No openings were left in the grain boundary. If AlN powder is sandwiched by refractory metal (Ti, Nb, Mo, Ta and W) foils during SPS, one obtains AlN ceramics metallized by the refractory metals even at 1200°C. The adhesion strength of Ti, Mo or W to AlN ceramics is sufficiently high, but that of Nb or Ta is low. The characterization of metal/AlN interfaces by X-ray diffractometory (XRD), scanning electron microscopy (SEM) and electron-probe microanalysis (EPMA) has revealed the formation of a thin reaction layer at the Ti/AlN interface, which may be the reason for the high adhesion strength of the Ti/AlN interface. The high adhesion strengths of Mo/AlN and W/AlN might also be associated with thinner metal/AlN reaction layers, which were unfortunately undetectable in our XRD data. The weak adhesion of Nb/AlN and Ta/AlN interfaces was elucidated by large differences in the thermal-expansion coefficient between metallic Nb or Ta and the AlN ceramics.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• Kai Ayako

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Miki Toshikatsu

  Department Of Electrical And Electronic Engineering Yamaguchi University

• Kai Ayako

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611, Japan

• Miki Toshikatsu

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611, Japan

• Johkoh Naoji

  Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611, Japan

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