Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
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概要
- 論文の詳細を見る
The internal quantum efficiency (IQE) of InGaN nanowires with different emission wavelength of 485, 515, 555, and 580 nm has been studied by means of photoluminescence (PL) spectroscopy. It was found from the analysis of IQE as a function of excitation power density that the IQE was unchanged at about 100% under weak excitation conditions at low temperature. This indicated that the effects of nonradiative recombination processes were negligibly small at low temperature. Moreover, the IQE increased from 5 to 12% with increasing emission wavelength from 485 to 580 nm. Since the clear correlation between the IQE and the PL blue shift due to band filling effects of localized states was observed, the increase in the IQE reflected the increase in the effect of exciton localization with increasing indium composition.
- 2013-08-25
著者
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Andoh Hiroya
Toyota National Coll. Technol. Aichi Jpn
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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YAMAGUCHI Masatoshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Fukuoka University
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Yamada Yoichi
Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Andoh Hiroya
Toyota National College of Technology, Toyota, Aichi 471-8525, Japan
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Murotani Hideaki
Toyota National College of Technology, Toyota, Aichi 471-8525, Japan
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Tsukamoto Takehiko
Toyota National College of Technology, Toyota, Aichi 471-8525, Japan
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Sugiura Toko
Toyota National College of Technology, Toyota, Aichi 471-8525, Japan
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Tabata Takuya
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
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Tabata Takuya
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Yamaguchi Masatoshi
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
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Amano Hiroshi
Department of Electronics, Nagoya University, Nagoya 464-8603, Japan
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Honda Yoshio
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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