Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る
• The Japan Society of Applied Physicsの論文

著者

• Amano Hiroshi

  Department of Cardiology and Pneumology, Dokkyo University School of Medicine

• YAMAGUCHI Masahito

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• Tabata Takuya

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

• Tabata Takuya

  Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Paek Jihyun

  Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan

• Honda Yoshio

  Department of Chemistry, Faculty of Science, Kanazawa University

関連論文

• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
• Hemodynamic Effects of Positive end-expiratory Pressure on Right Ventricular Diastolic Function in Patients with Acute Myocardial Infarction
• Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Leaflet Folding Plasty for Mitral Valve Repair : Technical Application and Early Outcome
• Scintigraphic Detection of Regional Disruption of the Adrenergic Nervous System in Sarcoid Heart disease
• Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
• Microscopic Investigation of Al_Ga_N on Sapphire
• Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
• Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
• Optical Transitions of the Mg Acceptor in GaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
• Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
• The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
• Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
• Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
• GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Optical Properties of Strained AlGaN and GaInN on GaN
• Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
• Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
• Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
• Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
• Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
• Present and Future Nitride-Based Devices
• Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Wannier-Stark Localization in Superlattices
• Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
• Low-Intensity Ultraviolet Photodetectors Based on AlGaN
• Investigation of the Leakage Current in GaN P-N Junctions
• Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
• Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
• Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
• Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
• Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
• Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
• Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
• Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
• Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
• Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
• High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
• Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
• Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
• Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy--Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
• Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
• Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
• High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
• Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
• Effects of Nano- and Microscale SiO
• Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
• Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Stacking Faults and Luminescence Property of InGaN Nanowires
• Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
• GaN Overgrowth on Thermally Etched Nanoporous GaN Template
• Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
• Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)
• Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Gel filtration study of the effect of urea on the dissolution state of sodium dodecyl sulfate.
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
• The separation of aluminium(III) and chromium(III) as their AcAc(acetylacetone)-complexes, and of cobalt(II), copper(II), magnesium(II), manganese(II), nickel(II), and lead(II) as their TTA(thenoyltrifluoroacetone)-complexes, by extraction chromatography.

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