High-Precision X-Ray Mask Technology

概要

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The current status of X-ray mask accuracy around the globe is briefly reviewed, and some of the work done at NTT LSI Laboratories in order to suppress distortions caused by stresses in SiN membrane (σ_<SiN>) and Ta absorber (σ_<Ta>) during the bulk-Si etching step in the subtractive process are explained. A mask-to-mask overlay accuracy of 0.09 μm (3σ) for 5 levels was attained with the conditions (1) σ_<SiN>・thickness_<SiN><10×10^4 dyn/cm and (2) σ_<SiN>>σ_<Ta>. With the aid of more precise stress control technology and membranes with a high Young's modulus, such as SiC, the accuracy of X-ray masks for practical use will reach at least 0.1 μm (3σ) in one or two years.
社団法人応用物理学会の論文
1990-11-20