Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs (Special Issue on Sub-Half Micron Si Device and Process Technologies)

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概要

• 論文の詳細を見る

• Hot carrier reliability due to residual damage in the gate oxide created by synchrotron X-ray irradiation is investigated for subquarter-micrometer NMOSFETs under a wide irradiation-dose range (10〜3,000 mJ / cm^2). Although irradiation-induced interface-traps and positive charges are completely eliminated after 400℃ post-metalization-annealing, neutral electron traps partially remain. The effects of the residual traps on hot-carrier degradation can be negligible when gate oxides thinner than about 5 nm are used, and it is found that there is no effect of irradiation damage on interface-trap generation due to injected hot-carriers. It is concluded that the influence of synchrotron radiation X-ray lithography on hot-carrie-induced degradation in subquarter-micrometer NMOSFETs can be negligible.

• 社団法人電子情報通信学会の論文
• 1993-04-25

著者

• MATSUDA Tadahito

  NTT LSI Laboratories

• DEGUCHI Kimiyoshi

  NTT LSI Laboratories

• TSUCHIYA Toshiaki

  NTT LSI Laboratories

• Deguchi K

  Department Of Electronics And Information Systems Osaka University

• Harada Mitsuru

  Ntt Lsi Laboratories

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