Resolution Enhancement of Hole Patterns in Sychrotron Radiation Lithography

概要

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This paper analyzes the influence of Fresnel diffraction on the patterning characteristics of isolated hole patterns in synchrotron radiation lithography by comparing Fresnel diffraction. simulation extended to 2-dimensional patterns and pattern replication experiments with mask contrast as a parameter. It is possible to replicate hole patterns down to 0.1 μm at a large proximity gap of 30 μm by keeping the mask contrast at 2.5-T. However, the exposure latitude for fine patterns below 0.1 μm diminishes abruptly. It also becomes clear that the phase-shifting mask which we previously proposed offers the possibility of replicating ultra-fine hole patterns (<0.1 μm) with a large exposure latitude at the 30-μm proximity gap. Moreover, by using an X-ray mask with a circular absorber pattern instead of the conventional square pattern, it should be possible to solve the problem of pattern deformation and improve the exposure latitude.
社団法人応用物理学会の論文
1993-12-30