A 4:1 MUX Circuit Using 1/4 Micron CMOS/SIMOX for High-Speed and Low-Power Applications

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概要

• 論文の詳細を見る

• We designed a new 4:1 multiplexer (MUX) circuit and fabricated it by 0.25-µm CMOS device process technology using Separation by IMplanted OXygen (SIMOX) wafer. This MUX circuit has a small number of fan-outs so that the SIMOX device, with smaller junction capacitance than a BULK device, effectively contributes to high-speed and low-power operation. We confirmed that the fabricated SIMOX MUX can operate at 2.7 GHz (@V DD = 2.0 V), which is 25% faster than the BULK MUX, and the power consumption is 19% less at the same speed and V DD. In addition, we confirmed that these improvements are mainly due to the reduced junction capacitance of SIMOX devices by estimating the gate speed in the critical path and the load capacitance in the SIMOX MUX circuit.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Inokawa Hiroshi

  Ntt Lsi Laboratories

• Kado Yuichi

  NTT LSI Laboratories

• Ino Masayuki

  Ntt Lsi Laboratories

• OHTOMO Yusuke

  NTT LSI Laboratories

• YASUDA Sadayuki

  NTT LSI Laboratories

• TSUCHIYA Toshiaki

  NTT LSI Laboratories

• Kado Yuichi

  NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan

• Yasuda Sadayuki

  NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan

• Ohtomo Yusuke

  NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan

• Inokawa Hiroshi

  NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan

• Tsuchiya Toshiaki

  NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan

• Ino Masayuki

  NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–01, Japan

関連論文

• A 1GHz/0.9mW CMOS/SIMOX Divide-by 128/129 Dual-Modulus Prescaler Using a Divide-by 2/3 Synchronous Counter
• An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit (Special Issue on Ultra-High-Speed LSIs)
• A 4:1 MUX Circuit Using 1/4 Micron CMOS/SIMOX for High-Speed and Low-Power Applications
• 3-Gb/s CMOS 1:4 MUX and DEMUX ICs
• A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit
• LSI Applications of 0.25-μm CMOS/SIMOX Technology
• Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• A 4:1 MUX Circuit Using 1/4 Micron CMOS/SIMOX for High-Speed and Low-Power Applications

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