An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4μm Gate Ultrathin-Film SIMOX Technology (Special Issue on Sub-Half Micron Si Device and Process Technologies)

概要

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We designed and fabricated a prototype 0.4-μm-gate CMOS / SIMOX PLL LSI in order to verify the potential usefulness of ultrathin-film SIMOX technology for creating an extremely low-power LSI containing high-speed circuits operating at frequencies of at least 1 GHz and at low supply voltages. This PLL LSI contains both high-frequency components such a prescaler and low-frequency components such as a shift register, phase frequency comparator, and fixed divider. One application of the LSI could be for synthesizing communication band frequencies in the front-end of a battery-operated wireless handy terminal for personal communications. At a supply voltage of 2 V, this LSI operates at up to 2 GHz while dissipating only 8.4 mW. Even at only 1.2 V, 1 GHz-operation can be obtained with a power consumption of merely 1.4 mW. To explain this low-power feature, we extensively measured the electrical characteristics of individual CMOS / SIMOX basic circuits as well as transistors. Test results showed that the high performance of the LSI is mainly due to the advanced nature of the CMOS / SIMOX devices with low parasitic capacitances around source / drain regions and to the new circuit design techniques used in the dual-modulus prescalar.
社団法人電子情報通信学会の論文
1993-04-25