10 Gbit / s, 35mV Decision IC Using 0.2μm GaAs MESFETs (Special Section of Letters Selected from the '92 Fall Conference and the '93 Spring Conference)
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概要
- 論文の詳細を見る
This letter reports a high-sensitivity GaAs decision IC for ultra-high-speed optical transmisson systems. The IC was designed using LSCFL (Low-power Source Coupled FET Logic) and fabricated with 0.2-μm-gate-length MESFETs with a cut-off frequency of 50 GHz. The input voltage sensitivity was 35 mV at 10 Gbit / s. This is the highest sensitivity ever reported for a MESFET decision IC.
- 社団法人電子情報通信学会の論文
- 1993-07-25
著者
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Togashi Minoru
Ntt Lsi Laboratories
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MURATA Koichi
NTT System Electronics Laboratories
-
Yamaguchi Satoshi
NTT LSI Laboratories
-
Murata Koichi
NTT LSI Laboratories
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HAGIMOTO Kazuo
NTT Network Innovation Laboratories, NTT Corporation
-
Suzuki M
Kddi Res. And Dev. Lab. Inc. Kamifukuoka‐shi Jpn
-
Ohhata Masanobu
NTT LSI Laboratories
-
Suzuki Masao
NTT LSI Laboratories
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Hagimoto Kazuo
NTT Transmission System Laboratories
-
Hagimoto K
Ntt Network Innovation Laboratories Ntt Corporation
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Murata Koichi
Ntt Photonics Laboratories
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