Parallel mB1C Word Alignment Procedure and Its Performance for High-Speed Optical Transmission
スポンサーリンク
概要
- 論文の詳細を見る
This paper proposes a parallel word alignment procedure for m Binary with 1 Complement Insertion (mB1C) or Differential m Binary with 1 Mark Insertion (DmB1M) line code. In the proposed procedure for mB1C line code, the word alignment circuit searches (m+1) bit pairs in parallel for complementary relationships. A Signal Flow Graph Model for the parallel word alignment procedure is also proposed, and its performance attributes are numerically analyzed. The attributes are compared with those of the conventional bit-by-bit procedure, and it is shown that the proposed procedure displays superior performance in terms of False-Alignment Probability and Maximum Average Aligning Time. The proposed procedure is suitable for high speed optical data links, because it can be easily implemented using a parallel signal processor operating at a clock rate equal to 1/(m+1) times the mB1C line rate.
- 社団法人電子情報通信学会の論文
- 1997-03-25
著者
-
Uematsu Yoshihiko
Ntt Optical Network Systems Laboratories
-
Matsuoka Shinji
NTT Optical Network Systems Laboratories
-
MURATA Koichi
NTT System Electronics Laboratories
-
Murata Koichi
Ntt Photonics Laboratories
関連論文
- A Universal Structure for SDH Multiplex Line Terminals with a Unique CMOS LSI for SOH Processing
- Parallel mB1C Word Alignment Procedure and Its Performance for High-Speed Optical Transmission
- Multiple DmB1C/DmB1M Coding Scheme for High-Speed Optical Multiplex Transmission
- Distributed-Controlled Multiple-Ring Networks with Classified Path Restoration
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Carrier-Suppressed Return-to- Zero Pulse Generation Using Mode-Locked Lasers for 40-Gbit/s Transmission(Special Issue on 40 Gbit/s Optical Transmission Technologies)
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- 10 Gbit / s, 35mV Decision IC Using 0.2μm GaAs MESFETs (Special Section of Letters Selected from the '92 Fall Conference and the '93 Spring Conference)
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- InP-based High-speed Transistors and Their IC Applications
- Fault Localization and Supervisory Channel Implementation for Optical Linear-Repeaters in SDH/SONET-Based Networks
- An Analytical Toggle Frequency Expression for Source-Coupled FET Logic(SCFL)Frequency Dividers
- Functional integrated modulators and receivers utilizing PLC hybrid integration technology for coherent transmission
- 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
- Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK
- デジタルコヒーレント方式用光集積回路技術の現状と将来展望 (特集 デジタルコヒーレント光通信技術の最前線)
- C-2-14 分布ミキサにおける方向性結合作用を用いたローカルリーク抑制法(C-2.マイクロ波A(マイクロ波・ミリ波能動デバイス),一般セッション)
- 野生動物の感染症管理にどのように取り組むべきが
- C-10-7 0.5μm InP HBTを用いた50Gbit/s差動出力リミッティングアンプIC(C-10.電子デバイス,一般セッション)
- C-10-6 0.5-μm InP HBTによる60-GS/s超高速D/A変換器(C-10.電子デバイス,一般セッション)
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器(化合物半導体デバイス及び超高周波デバイス/一般)
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器(化合物半導体デバイス及び超高周波デバイス/一般)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術
- Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- A low-power wideband InP-HBT 27-1 PRBS generator
- 光通信ネットワークの大容量化に向けたディジタルコヒーレント信号処理技術の研究開発(総合報告)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- C-10-13 フィードスルー型パッケージを用いた超高速InP-HBT DACモジュール(C-10. 電子デバイス,一般セッション)
- C-10-12 A low-power wideband InP-HBT 2^7-1 PRBS Generator
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 120GHz帯20Gbit/sQPSK送信,受信モジュール(化合物半導体テバイス及び超高周波テバイス/マイクロ波一般)
- 120GHz帯無線リンクに用いる10Gbit/s BPSK変復調MMIC
- 120GHz帯20Gbit/sQPSK送信,受信モジュール(化合物半導体テバイス及び超高周波テバイス/マイクロ波一般)
- High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems