High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
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概要
- 論文の詳細を見る
This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal–organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality heterointerfaces between In(Ga,Al)As and In(Al)P. Fabricated 80-nm-gate CC HEMTs exhibit on- and off-state breakdown (burnout) voltages estimated at higher than 3 and 8 V. An excellent current-gain cutoff frequency ($ f_{\text{T}}$) of 186 GHz is also obtained in the CC HEMTs. The on-wafer uniformity of CC-HEMT characteristics is comparable to those of our mature 100-nm-gate InGaAs single-channel HEMTs. Bias-stress aging tests reveals that the lifetime of CC HEMTs is expected to be comparable to that of our conventional InGaAs single-channel HEMTs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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MURATA Koichi
NTT System Electronics Laboratories
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Enoki Takatomo
Ntt Photonics Laboratories
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Yamane Yasuro
Ntt Electronics Corporation
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Kosugi Toshihiko
Ntt Photonics Laboratories
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Tokumitsu Masami
Ntt Electronics Corporation
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Murata Koichi
Ntt Photonics Laboratories
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Kosugi Toshihiko
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Murata Koichi
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Enoki Takatomo
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Tokumitsu Masami
NTT Electronics Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamane Yasuro
NTT Electronics Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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