A 40-Gbit/s Decision IC Fabricated with 0.12-μm GaAs MESFETs
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概要
- 論文の詳細を見る
The authors report on a 40-Gbit/s super-dynamic decision IC fabricated with 0.12-μm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.
- 社団法人電子情報通信学会の論文
- 1997-12-25
著者
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Otsuji Taiichi
Ntt Network Innovation Laboratories
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Otsuji Taiichi
Ntt Optical Network Systems Laboratories
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MURATA Koichi
NTT Optical Network Systems Laboratories
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YONEYAMA Mikio
NTT Optical Network Systems Laboratories
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TOKUMITSU Masami
NTT Electronics Technology Corporation
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Murata K
Ntt Photonics Laboratories
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Yoneyama Mikio
Ntt Electronics Corporation
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Murata K
Ntt Photonics Laboratories Ntt Corporation
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Otsuji T
Kyushu Inst. Of Technol. Iizuka‐shi Jpn
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Tokumitsu Masami
Ntt Electronics Corporation
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