Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK
スポンサーリンク
概要
- 論文の詳細を見る
We study effects of preamplifier nonlinearity on polarization mode dispersion (PMD) equalization performance of feed-forward equalizer (FFE) electronic dispersion compensation (EDC) IC. We have shown that a nonlinear limiting amplifier can be used as a preamplifier for FFE EDC IC for a 6-dB dynamic range.
- (社)電子情報通信学会の論文
- 2011-07-01
著者
-
Fukuyama Hiroyuki
Ntt Photonics Laboratories Ntt Corporation
-
Fukuyama Hiroyuki
Ntt Photonics Laboratories
-
Murata K
Ntt Corp. Atsugi‐shi Jpn
-
Itoh Toshihiro
Ntt Photonics Laboratories Ntt Corporation
-
Murata K
Ntt Photonics Laboratories Ntt Corporation
-
Furuta Tomofumi
Ntt Photonic Laboratories Ntt Corpration
-
Murata Koichi
Ntt Photonics Laboratories
-
Furuta Tomofumi
Ntt Photonics Laboratories Ntt Corporation
関連論文
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A 40-Gbit/s Decision IC Fabricated with 0.12-μm GaAs MESFETs
- Parallel mB1C Word Alignment Procedure and Its Performance for High-Speed Optical Transmission
- Multiple DmB1C/DmB1M Coding Scheme for High-Speed Optical Multiplex Transmission
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
- Carrier-Suppressed Return-to- Zero Pulse Generation Using Mode-Locked Lasers for 40-Gbit/s Transmission(Special Issue on 40 Gbit/s Optical Transmission Technologies)
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- 10 Gbit / s, 35mV Decision IC Using 0.2μm GaAs MESFETs (Special Section of Letters Selected from the '92 Fall Conference and the '93 Spring Conference)
- Collapse of Quantized Conductance in a Mesoscopic Tomonaga-Luttinger Liquid
- 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications
- A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
- An MMIC Resonant-Tunneling HEMT Doubler
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
- The Primary Structure of Cassowary (Casuarius casuarius) Goose Type Lysozyme(Biochemistry & Molecular Biology)
- A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- High-Speed Response of Uni-Traveling-Carrier Photodiodes
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
- Generation and Propagation of Sub-Terahertz Pulse Signal Using Waveguide-Integrated InP/InGaAs Uni-Traveling-Carrier Photodiode
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- InP-based High-speed Transistors and Their IC Applications
- Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
- Purification and Characterization of Goose Type Lysozyme from Cassowary (Casuarlus casuarius) Egg White
- SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
- Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
- Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs(Lasers,Quantum Electronics)
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
- An Analytical Toggle Frequency Expression for Source-Coupled FET Logic(SCFL)Frequency Dividers
- High-Speed and High-Output Uni-Traveling-Carrier Photodiodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Functional integrated modulators and receivers utilizing PLC hybrid integration technology for coherent transmission
- 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
- Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK
- デジタルコヒーレント方式用光集積回路技術の現状と将来展望 (特集 デジタルコヒーレント光通信技術の最前線)
- C-2-14 分布ミキサにおける方向性結合作用を用いたローカルリーク抑制法(C-2.マイクロ波A(マイクロ波・ミリ波能動デバイス),一般セッション)
- 野生動物の感染症管理にどのように取り組むべきが
- C-10-7 0.5μm InP HBTを用いた50Gbit/s差動出力リミッティングアンプIC(C-10.電子デバイス,一般セッション)
- C-10-6 0.5-μm InP HBTによる60-GS/s超高速D/A変換器(C-10.電子デバイス,一般セッション)
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器(化合物半導体デバイス及び超高周波デバイス/一般)
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器(化合物半導体デバイス及び超高周波デバイス/一般)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術
- Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs
- 0.5-μm InP HBTによる光通信用60-GS/s D/A変換器
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- A low-power wideband InP-HBT 27-1 PRBS generator
- 光通信ネットワークの大容量化に向けたディジタルコヒーレント信号処理技術の研究開発(総合報告)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection
- C-10-13 フィードスルー型パッケージを用いた超高速InP-HBT DACモジュール(C-10. 電子デバイス,一般セッション)
- C-10-12 A low-power wideband InP-HBT 2^7-1 PRBS Generator
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- 光技術及び電子回路技術を使用した屋外用120GHz帯無線技術(マイクロ波フォトニクス技術,一般)
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
- 120GHz帯20Gbit/sQPSK送信,受信モジュール(化合物半導体テバイス及び超高周波テバイス/マイクロ波一般)
- 120GHz帯無線リンクに用いる10Gbit/s BPSK変復調MMIC
- 120GHz帯20Gbit/sQPSK送信,受信モジュール(化合物半導体テバイス及び超高周波テバイス/マイクロ波一般)
- High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems