The InP-HEMT IC Technology for 40-Gbit/s Optical Communications

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概要

• 論文の詳細を見る

• The InP-HEMT IC technology is outlined. This technology realize the integration of 0.1 um gate length HEMTs, vertical diodes, capacitors and WSiN resistors with two level interconnections. The InP-HEMT degradation mode is investigated. The increase in Rd is the critical condition for 100 C use. InAlP-CSL(carrier supply layer)-HEMTs have 100 times longer lifetime than the usual InAlAs-CSL-HEMTs. This HEMT lifetime is 10^7 hours at 100 C. This technology realizes 43 Gbit/s operating SSIs and MSIs with practical yield, successfully.

• 社団法人電子情報通信学会の論文
• 2001-06-30

著者

• Murata K

  Ntt Photonics Laboratories

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• YAMANE Yasuro

  NTT Photonics Laboratories

• Yamane Y

  Ntt Electronics Corporation

• FUKAI Yoshino

  NTT Photonics Laboratories, NTT Corporation

• Fukai Yoshino

  Ntt Photonics Laboratories Ntt Corporation

• MURATA Koichi

  NTT Photonics Laboratories, NTT Corporation

• Murata Koichi

  Ntt Photonics Laboratories Ntt Corporation

• Murata K

  Ntt Corp. Atsugi‐shi Jpn

• Umeda Yohtaro

  Ntt Photonics Laboratories

• Umeda Y

  Ntt Photonics Lab. Kanagawa Jpn

• Enoki Takatomo

  Ntt Photonics Laboratories

• SUGITANI Suehiro

  NTT Photonics Laboratories

• Murata K

  Ntt Photonics Laboratories Ntt Corporation

• KITABAYASHI Hiroto

  NTT Photonics Laboratories, NTT Corporation

• Umeda Yohtaro

  Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present Address) Faculty Of Engineering Nagoya University

• Kitabayashi Hiroto

  Ntt Photonics Laboratories Ntt Corporation

• Murata Koichi

  Ntt Photonics Laboratories

• Sugitani Suehiro

  NTT Photonics Laboratories, NTT Corporation

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