FUKAI Yoshino | NTT Photonics Laboratories, NTT Corporation
スポンサーリンク
概要
関連著者
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FUKAI Yoshino
NTT Photonics Laboratories, NTT Corporation
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Fukai Yoshino
Ntt Photonics Laboratories Ntt Corporation
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ENOKI Takatomo
NTT Photonics Laboratories, NTT Corporation
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YAMANE Yasuro
NTT Photonics Laboratories
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Yamane Y
Ntt Electronics Corporation
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Enoki Takatomo
Ntt Photonics Laboratories
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SUGITANI Suehiro
NTT Photonics Laboratories
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KITABAYASHI Hiroto
NTT Photonics Laboratories, NTT Corporation
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Kitabayashi Hiroto
Ntt Photonics Laboratories Ntt Corporation
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Sugitani Suehiro
NTT Photonics Laboratories, NTT Corporation
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Murata K
Ntt Photonics Laboratories
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KURISHIMA Kenji
NTT Photonics Laboratories, NTT Corporation
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MURATA Koichi
NTT Photonics Laboratories, NTT Corporation
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Murata Koichi
Ntt Photonics Laboratories Ntt Corporation
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Murata K
Ntt Corp. Atsugi‐shi Jpn
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Umeda Yohtaro
Ntt Photonics Laboratories
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Umeda Y
Ntt Photonics Lab. Kanagawa Jpn
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Murata K
Ntt Photonics Laboratories Ntt Corporation
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Umeda Yohtaro
Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation
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Kurishima Kenji
Ntt Photonics Laboratories Ntt Corporation
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Maezawa Koichi
Ntt System Electronics Laboratories:(present Address) Faculty Of Engineering Nagoya University
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Kashio Norihide
Ntt Photonics Laboratories Ntt Corporation
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Murata Koichi
Ntt Photonics Laboratories
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Yamahata Shoji
Ntt Photonics Laboratories
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Yamahata Shoji
Ntt Corp. Atsugi‐shi Jpn
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KASHIO Norihide
NTT Photonics Laboratories, NTT Corporation
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FUKAI YoshinoYoshino
NTT Photonics Laboratories, NTT Corporation
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Fukai Yoshinoyoshino
Ntt Photonics Laboratories Ntt Corporation
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Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
著作論文
- Highly Reliable Submicron InP-Based HBTs with over 300-GHz f_t
- Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity