Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs(<Special Issue > Heterostructure Microelectronics with TWHM2003)

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概要

• 論文の詳細を見る

• We demonstrated the uniformity and stability as well as the high breakdown voltage of 0 1-μm-gate InP HEMTs with a double recess structure. To overcome the drawbacks regarding the uniformity and stability in the double recess structure, an InP passivation layer that functions as an etch-stopper and a surface passivator was successfully applied to the structure. It was confirmed that there was no degradation in the uniformity and stability of device performance for the double recess HEMTs that had the breakdown voltages in the on-state and off-state improved by a factor of 1.6.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• YAMANE Yasuro

  NTT Photonics Laboratories

• Yamane Y

  Ntt Electronics Corporation

• FUKAI Yoshino

  NTT Photonics Laboratories, NTT Corporation

• Fukai Yoshino

  Ntt Photonics Laboratories Ntt Corporation

• Enoki Takatomo

  Ntt Photonics Laboratories

• SUGITANI Suehiro

  NTT Photonics Laboratories

• KITABAYASHI Hiroto

  NTT Photonics Laboratories, NTT Corporation

• Kitabayashi Hiroto

  Ntt Photonics Laboratories Ntt Corporation

• Sugitani Suehiro

  NTT Photonics Laboratories, NTT Corporation

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