Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

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概要

• 論文の詳細を見る

• InP-based high electron mobility transistor (HEMT) structures with a pseudomorphic InAlP barrier/spacer and an InGaAs channel were grown by metal-organic vapor-phase epitaxy (MOVPE). The thickness and composition of the InAlP/InGaAs heterostructure were optimized to reduce the gate-channel distance and obtain high electron mobility. The mobility of over 10000 cm2/V$\cdot$s with the sheet carrier concentration ($N_{\text{s}}$) of around $2\times 10^{12}$ cm-2 was successfully obtained at room temperature in an In0.75Al0.25P/In0.75Ga0.25As pseudomorphic HEMT. The reliability of the InAlP layer as a gate-recess wet-etching stopper was also confirmed. The pseudomorphic In0.75Al0.25P-barrier/In0.75Ga0.25As-channel layer structure is suitable for practical ultrahigh-speed InP-based HEMTs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-06-15

著者

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• SUGIYAMA Hiroki

  NTT Photonics Laboratories

• Enoki Takatomo

  Ntt Photonics Laboratories

• Yokoyama Haruki

  Ntt Photonics Lab. Kanagawa Jpn

• Matsuzaki Hideaki

  Ntt Photonics Laboratories

• Matsuzaki Hideaki

  NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Enoki Takatomo

  NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Yokoyama Haruki

  NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Sugiyama Hiroki

  NTT Photonics Laboratories, 3-1 Morinosato, Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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