Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
スポンサーリンク
概要
- 論文の詳細を見る
A $\Delta\Sigma$ modulator using a frequency modulation intermediate signal was demonstrated using a resonant tunneling logic gate called a monostable bistable transition logic element (MOBILE). This $\Delta\Sigma$ modulator is based on the nature of an FM signal and suitable for high-speed operation. Experiments using an InP-based MOBILE demonstrate good noise shaping characteristics. Moreover, the operation with a higher FM carrier frequency than the sampling frequency was demonstrated, showing equally good noise shaping performance. This makes the design of the voltage-controlled oscillator, which is a key component of the FM $\Delta\Sigma$ modulator, much easier. Consequently, an FM $\Delta\Sigma$ modulator using MOBILE is promising for high-resolution, wide-band analog-to-digital converters (ADCs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
MIZUTANI Takashi
Graduate School of Engineering, Nagoya University
-
Maezawa Koichi
Graduate School Of Engineering Nagoya University
-
Matsuzaki Hideaki
Ntt Photonics Laboratories
-
Matsuzaki Hideaki
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Sakou Mario
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Matsubara Wataru
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
関連論文
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator
- Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation
- Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider
- A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
- An MMIC Resonant-Tunneling HEMT Doubler
- Effects of the HEMT Parameters on the Operation Frequency of Resonant Tunneling Logic Gate MOBILE
- A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
- High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
- Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
- SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
- Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer
- Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors
- A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators
- A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes(Semiconductors)
- Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer
- High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices
- Possibility of Terahertz Amplification by Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
- Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy (Special Issue : Solid State Devices and Materials (1))
- Improved Bias Stability of the Resonant Tunneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate
- A Proposal of High-Performance Samplers Based on Resonant Tunneling Diodes
- Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
- Ultrashort Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
- Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Effective Mobility Enhancement in Al
- Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation
- Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy
- Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
- Possibility of THz detection with resonant tunneling super regenerative detectors based on extremely high order harmonics
- Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Ti and Pd Overlayer