Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-11-15

著者

• MAEZAWA Koichi

  Graduate School of Engineering, Nagoya University

• KISHIMOTO Shigeru

  Graduate School of Engineering, Nagoya University

• MIZUTANI Takashi

  Graduate School of Engineering, Nagoya University

• Maezawa Koichi

  Ntt System Electronics Laboratories:(present) Faculty Of Engineering Nagoya University

• KAWANO Yoichi

  Graduate School of Engineering, Nagoya University

• Kawano Yoichi

  Graduate School Of Engineering Nagoya University

• Kishimoto Shigeru

  Department Of Quantum Engineering Nagoya University

• Kawano Y

  Graduate School Of Engineering Nagoya University

• KAWANO Yoichi

  Department of Quantum Engineering, Nagoya University

• Kurokawa Yuto

  Department Of Quantum Engineering Nagoya University

• Maezawa K

  Graduate School Of Science And Engineering University Of Toyama

• Maezawa Koichi

  Graduate School Of Engineering Nagoya University

• Maezawa Koichi

  Univ. Of Toyama Toyama‐shi Jpn

関連論文

• Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
• Dual wavelength high power laser diodes fabricated by Selective Fluidic Self-Assembly technique
• Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
• Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator
• Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film
• Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation
• Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
• Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
• Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
• A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
• A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
• High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
• High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
• Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
• High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• Robust Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit
• Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider
• Edge Recording on Direct Overwrite Exchange-Coupled Multilayer Media : Media
• Edge Recording on Direct Overwrite Exchange-Coupled Multilayer Media
• Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
• Electroluminescence Measurement of n^+ Self-Alighed Gate GaAs MESFETs
• Electroluminescence Measurement of n Self-Aligned GaAs MESFETs
• Effects of the HEMT Parameters on the Operation Frequency of Resonant Tunneling Logic Gate MOBILE
• Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
• Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy
• Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
• Kelvin Probe Force Microscopy for Potential Distribution Measurement of Cleaved Surface of GaAs Devices
• A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
• High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
• Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
• Device Technology for Monolithic Integration of InP-Based Resonant Tunneling Diodes and HEMTs (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
• AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
• Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer
• Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors
• High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges
• A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators
• A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes(Semiconductors)
• 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices (Special Issue on Multiple-Valued Logic and Its Applications)
• Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer
• High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
• Threshold Logic Function on Both Positive and Negative Weighted Sums in Multiple-Input Monostable-Bistable Transition Logic Elements
• Monte Carlo Study of Charge Injection Transistors (CHINTs)
• Possibility of Terahertz Amplification by Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
• Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
• Photoluminescence Study of Resonant Tunneling Transistor with p^+/n-Junction Gate
• Measurement of Contact Potential of GaAs pn Junctions by Kelvin Probe Force Microscopy
• Measurement of Contact Potential of GaAs/AlGaAs Heterostructure Using Kelvin Probe Force Microscopy
• Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
• In-situ Calibration for Electric Field Measurements in Glow-Discharge Plasmas by Laser-Induced Fluorescence Using the Optogalvanic Technique
• Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs
• Inhomogeneous Contact Potential Image of AlGaN/GaN Grown on Sapphire Substrate Measured by Kelvin Probe Force Microscopy : Semiconductors
• Estimation of Height of Barrier Formed in Metallic Carbon Nanotube (Special Issue : Solid State Devices and Materials (1))
• Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy (Special Issue : Solid State Devices and Materials (1))
• Improved Bias Stability of the Resonant Tunneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate
• A Proposal of High-Performance Samplers Based on Resonant Tunneling Diodes
• Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
• Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
• Ultrashort Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
• Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
• Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
• Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator
• Effective Mobility Enhancement in Al
• Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation
• Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes
• Possibility of THz detection with resonant tunneling super regenerative detectors based on extremely high order harmonics
• Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
• Conduction-Type Control of Carbon Nanotube Field-Effect Transistors by Ti and Pd Overlayer

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