Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs

概要

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In this paper we discuss the properties of InGaAs/AlAs metamorphic resonant tunneling diodes (RTDs) on GaAs substrates. The current–voltage, surface roughness, and low-frequency noise characteristics were investigated to clarify the effect of step-grading buffer layers. No degradation of the current–voltage characteristics were observed despite the large surface roughness due to a lattice mismatch. Moreover, low-frequency noise measurements showed only $1/ f$ noise without special peak structures, and the amplitudes of which were comparable to those of the lattice-matched ones. Next, we fabricated resonant tunneling frequency divider ICs, which is based on the bifurcation phenomenon in a chaos system, on metamorphic substrates. A maximum operation frequency of 88 GHz and good phase noise properties were obtained, which are similar to those of the lattice-matched ones. These results demonstrate the effectiveness of the step-grading buffer layers even for the RTDs that consist of very thin layers and are sensitive to crystal qualities.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-07-15