Improved Bias Stability of the Resonant Tunneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate
スポンサーリンク
概要
- 論文の詳細を見る
Resonant tunneling diode (RTD) pair oscillators were fabricated on an AlN ceramic substrate employing a novel integration process based on an assembly of small device blocks. By using this process, chip capacitors were mounted close to the oscillator without large parasitic inductance. This can relax the severe condition for bias stability. Stable oscillations were observed in the fabricated circuits at 35–50 GHz. A good single sideband phase noise of $-100$ dBc/Hz at a 100 kHz offset frequency was also observed for the fabricated circuit.
- 2009-04-25
著者
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AKAMATSU Kazuhiro
Nippon Mining & Metals Co., Ltd.
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KISHIMOTO Shigeru
Graduate School of Engineering, Nagoya University
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MIZUTANI Takashi
Graduate School of Engineering, Nagoya University
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Maezawa Koichi
Graduate School Of Engineering Nagoya University
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Kamegai Naoki
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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