Effective Mobility Enhancement in Al

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概要

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• Al<inf>2</inf>O<inf>3</inf>/InSb/Si quantum well MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thickness ranged from 6 to 25 nm. These thicknesses are close to the critical thickness of InSb on Si, when the InSb layer is grown using a special technique called surface reconstruction controlled epitaxy, which reduces the lattice mismatch from 19.3 to 3.3% by rotating the in-plane InSb axis by 30^\circwith respect to the Si(111) substrate. Good FET characteristics were observed for 10 nm InSb channel devices. The dependence of the device properties on InSb channel thickness was investigated. The enhancement of effective mobility for thin InSb channel devices was demonstrated, which indicates the crystal quality improvement when approaching the critical thickness.

• 2013-04-25

著者

• MIZUTANI Takashi

  Graduate School of Engineering, Nagoya University

• Mori Masayuki

  Graduate School Of Science And Engineering University Of Toyama

• Maezawa Koichi

  Graduate School Of Engineering Nagoya University

• Maezawa Koichi

  Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

• Yasui Yuichiro

  Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

• Nakayama Koji

  Graduate School of Biomedical Sciences, Nagasaki University

• Ito Taihei

  Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

• Kadoda Azusa

  Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

• Miyazaki Eiji

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Mori Masayuki

  Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

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