A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators
スポンサーリンク
概要
- 論文の詳細を見る
A third order harmonic oscillator has been proposed based on the resonant tunneling diode pair oscillators. This oscillator has significant advantages, good stability of the oscillation frequency against the load impedance change together with capability to output higher frequencies. Proper circuit operation has been demonstrated using circuit simulations. It has been also shown that the output frequency is stable against the load impedance change.
- 2010-08-01
著者
-
Maezawa Koichi
Graduate School Of Science And Engineering University Of Toyama
-
Kasahara Koji
Graduate School Of Science And Engineering University Of Toyama
-
Mori Masayuki
Graduate School Of Science And Engineering University Of Toyama
-
Maezawa Koichi
Graduate School Of Engineering Nagoya University
-
OHE Takashi
Graduate School of Science and Engineering, University of Toyama
-
Ohe Takashi
Graduate School Of Science And Engineering University Of Toyama
関連論文
- Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
- Resonant Tunneling Chaos Generator for High-Speed/Low-Power Frequency Divider
- Effects of the HEMT Parameters on the Operation Frequency of Resonant Tunneling Logic Gate MOBILE
- A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
- High Power and Stable Oscillations in the RTD Pair Oscillator ICs Fabricated with Metamorphic RTDs
- Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer
- A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators
- A Delta-Sigma Analog-to-Digital Converter Using Resonant Tunneling Diodes(Semiconductors)
- Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer
- High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices
- Possibility of Terahertz Amplification by Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
- Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy (Special Issue : Solid State Devices and Materials (1))
- Improved Bias Stability of the Resonant Tunneling Diode Pair Oscillators Integrated on an AlN Ceramic Substrate
- A Proposal of High-Performance Samplers Based on Resonant Tunneling Diodes
- Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
- Ultrashort Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates
- Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs
- Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
- Direct Observation of High-Frequency Chaos Signals from the Resonant Tunneling Chaos Generator
- Effective Mobility Enhancement in Al
- Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation
- Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes
- Possibility of THz detection with resonant tunneling super regenerative detectors based on extremely high order harmonics