Effects of the HEMT Parameters on the Operation Frequency of Resonant Tunneling Logic Gate MOBILE

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概要

• 論文の詳細を見る

• The Monostable-bistable Transition Logic Element (MOBILE) is constructed from two resonant tunneling diodes (RTDs) and HEMTs. Their potential is ultrahigh- frequency operation at room temperature. The characteristic about the gate width of HEMTs and the device area of RTDs is the most important parameter for their high-frequency operation. We demonstrate this characteristic by circuit simulation under realistically conditions. And we report that if HEMTs have narrower gate width, MOBILE is expected to operate in higher frequency.

• 社団法人電子情報通信学会の論文
• 2002-03-01

著者

• MAEZAWA Koichi

  Graduate School of Engineering, Nagoya University

• OHNO Yutaka

  Graduate School of Engineering, Nagoya University

• Ohno Yutaka

  Graduate School Of Engineering Nagoya University

• Mizutani Takasi

  Graduate School Of Engineering Nagoya University

• AOYAMA Tomoko

  Graduate School of Engineering, Nagoya University

• KISHIMOTO Sigeru

  Graduate School of Engineering, Nagoya University

• Aoyama Tomoko

  Graduate School Of Engineering Nagoya University

• Maezawa Koichi

  Graduate School Of Engineering Nagoya University

• Kishimoto Sigeru

  Graduate School Of Engineering Nagoya University

関連論文

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• Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation
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