W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

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• An active integrated antenna (AIA) oscillator consisting of an active circuit and planar antenna on the same substrate can be used as a high-performance, low-cost, small component for millimeter-to-sub-millimeter wave applications. We describe a highly extended, finite-difference-time-domain full-wave analysis method for designing AIA circuits precisely. It treats active devices as distributed elements. Using this method and 0.1-μm-gate InP-based HEMTs, we fabricated W-band AIA oscillators with an oscillation frequency of 111GHz.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• Sano Eiichi

  Research Center For Integrated Quantum Electronics Hokkaido University

• INAFUNE Koji

  Research Center for Integrated Quantum Electronics, Hokkaido University

• MATSUZAKI Hideaki

  NTT Photonics Laboratories, NTT Corporation

• KOSUGI Toshihiko

  NTT Photonics Laboratories, NTT Corporation

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• Sano Eiichi

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Inafune Koji

  Research Center For Integrated Quantum Electronics Hokkaido University

• Enoki Takatomo

  Ntt Photonics Laboratories

• Enoki Takatomo

  Ntt Photonics Laboratories Ntt Corporation

• Kosugi Toshihiko

  Ntt Photonics Laboratories

• Matsuzaki Hideaki

  Ntt Photonics Laboratories

• Matsuzaki Hideaki

  Ntt Photonics Laboratories Ntt Corporation

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