Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
スポンサーリンク
概要
- 論文の詳細を見る
We measured surface acoustic wave (SAW) characteristics along the [01-10] and [2-1-10] directions of 1.5- and 2-μm-thick GaN layers on (0001) sapphire substrates at ambient temperatures between $-50$ and 200°C. The extracted thermal coefficient of delay (TCD) for the SAW propagating along the [01-10] direction, which is smaller than that for the SAW propagating along the [2-1-10] direction, decreases when GaN layer thickness, $h$, multiplied by SAW wave number, $k$, increases. The TCD for $hk = 3.9$, which might be close to that in bulk GaN, is as small as 28.3 ppm/deg. These results indicate that GaN is promising for SAW device operation over a wide range of ambient temperatures.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-04-10
著者
-
Hohkawa Kohji
Kanagawa Institute of Technology
-
Nishimura Kazumi
NTT Photonics Laboratories
-
Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
-
Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
-
Hohkawa Kohji
Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi-shi, Kanagawa 243-0292, Japan
-
Nishimura Kazumi
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
-
Nishimura Kazumi
NTT Photonic Laboratories, 3-3-18 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
- Basic Study to Develop Biosensors Using Surface Acoustic Waves
- A Universal Structure for SDH Multiplex Line Terminals with a Unique CMOS LSI for SOH Processing
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology
- Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- P2-29 Basic Study on Fabrication Technology of MEMS Transducer(Poster session 2)
- P2-39 Surface Acoustic Wave devices on AlGaN/GaN heterostructure(Poster session 2)
- P2-6 Acoustic Wave Device Using GaN film with n+ Conduction Layer(Short oral presentation for posters)
- P2-5 Study on Layer Mode Device on GaN/Al_2O_3(Short oral presentation for posters)
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
- Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
- Quantum-Well Photoemission Media for Terabit/inch^2 Ultrahigh-Density Optical Storage Employing Probe-Collection Tunneling-Electron Luminescence(Optics and Quantum Electronics)
- High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
- Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Basic Study to Develop Biosensors Using Surface Acoustic Waves
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
- Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors