P2-6 Acoustic Wave Device Using GaN film with n+ Conduction Layer(Short oral presentation for posters)

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概要

• 論文の詳細を見る
• 超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
• 2005-11-16

著者

• Koh Keishin

  Kanagawa Institute of Technology

• Nishimura Kazumi

  NTT Photonics Laboratories

• Koh Keishin

  Kanagawa Institute Of Technolgy

• Wada Masaya

  Kanagawa Institute Of Technology

• Mizusawa Takahiro

  Kanagawa Institute of Technology

• Hokawa Kohji

  Kanagawa Institute of Technology

• Sigekawa Naoteru

  NTT Photonics Laboratories

• Hokawa Kohji

  Kanagawa Institute Of Technolgy

• Nishimura Kazumi

  NTT Photonic Laboratories, 3-3-18 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
• Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology
• P2-29 Basic Study on Fabrication Technology of MEMS Transducer(Poster session 2)
• P2-39 Surface Acoustic Wave devices on AlGaN/GaN heterostructure(Poster session 2)
• P2-6 Acoustic Wave Device Using GaN film with n+ Conduction Layer(Short oral presentation for posters)
• P2-5 Study on Layer Mode Device on GaN/Al_2O_3(Short oral presentation for posters)
• P3-32 Integration technology of two-dimensional ultrasonic transducers(Poster session 3)
• New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
• DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
• Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates

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