P2-5 Study on Layer Mode Device on GaN/Al_2O_3(Short oral presentation for posters)

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概要

• 論文の詳細を見る
• 超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
• 2005-11-16

著者

• Nishimura Kazumi

  NTT Photonics Laboratories

• Kaneshiro Chinami

  Kanagawa Institute Of Technology

• Yokota Manabu

  Kanagawa Inst. Technol.

• Yokota Manabu

  Kanagawa Institute Of Technolgy

• Hokawa Kohji

  Kanagawa Institute of Technology

• Sigekawa Naoteru

  NTT Photonics Laboratories

• Hokawa Kohji

  Kanagawa Institute Of Technolgy

• Nishimura Kazumi

  NTT Photonic Laboratories, 3-3-18 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
• Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes
• The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
• Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
• Fabrication of Si/LiNbO_3 Structure by Using Film Bonding Process
• Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
• Programmable Surface Acoustic Wave-Semiconductor Correlator with Multi-Strip Structure
• X-Ray Analysis of Stress Distribution in Semiconductor Films Bonded to a Piezoelectric Substrate(Instrumentation, Measurement, and Fabrication Technology)
• Surface Acoustic Wave Functional Devices Coupled with Film-Bonded Semiconductor Active Elements
• Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology
• Photoresponse on Surface Acoustic Wave Devices with Compound Semiconductor and LiNbO_3 Structures
• P2-29 Basic Study on Fabrication Technology of MEMS Transducer(Poster session 2)
• P2-39 Surface Acoustic Wave devices on AlGaN/GaN heterostructure(Poster session 2)
• P2-6 Acoustic Wave Device Using GaN film with n+ Conduction Layer(Short oral presentation for posters)
• P2-5 Study on Layer Mode Device on GaN/Al_2O_3(Short oral presentation for posters)
• P3-32 Integration technology of two-dimensional ultrasonic transducers(Poster session 3)
• New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
• DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
• Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates

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