Nishimura Kazumi | NTT Photonics Laboratories
スポンサーリンク
概要
関連著者
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Nishimura Kazumi
NTT Photonics Laboratories
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Nishimura Kazumi
NTT Photonic Laboratories, 3-3-18 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Koh Keishin
Kanagawa Institute of Technology
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Koh Keishin
Kanagawa Institute Of Technolgy
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Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
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Hokawa Kohji
Kanagawa Institute of Technology
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Sigekawa Naoteru
NTT Photonics Laboratories
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Hokawa Kohji
Kanagawa Institute Of Technolgy
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Hohkawa Kohji
Kanagawa Institute of Technology
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Kaneshiro Chinami
Kanagawa Institute Of Technology
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Yokota Manabu
Kanagawa Inst. Technol.
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Yokota Manabu
Kanagawa Institute Of Technolgy
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Mizusawa Takahiro
Kanagawa Institute of Technology
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黄 啓新
神工大工学部
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宝川 幸司
神工大工学部
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宝川 幸司
神奈川工科大学工学部
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Kanashiro Chinami
Kanagawa Institute of Technology
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Shigekawa Naoteru
NTT Photonics Laboratories
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Wada Masaya
Kanagawa Institute Of Technology
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Hohkawa Kohji
Department Of Electronic & Electrical Engineering Kanagawa Institute Of Technology
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Ida Minoru
Ntt Photonics Laboratories Ntt Corporation
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Kaneshiro C
Kanagawa Institute Of Technology
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Komine Kenji
Advanced Technology Research Laboratory Meidensha Corporation
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SUGITANI Suehiro
NTT Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Sugitani Suehiro
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Tsutsumi Takuya
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Koh Keishin
Faculty of Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa 243-0292, Japan
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Hohkawa Kohji
Faculty of Engineering, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa 243-0292, Japan
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Hohkawa Kohji
Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi-shi, Kanagawa 243-0292, Japan
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Nishimura Kazumi
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
著作論文
- P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
- P2-39 Surface Acoustic Wave devices on AlGaN/GaN heterostructure(Poster session 2)
- P2-6 Acoustic Wave Device Using GaN film with n+ Conduction Layer(Short oral presentation for posters)
- P2-5 Study on Layer Mode Device on GaN/Al_2O_3(Short oral presentation for posters)
- New Stacked Metal--Insulator--Metal Capacitor with High Capacitance Density for Future InP-Based ICs
- DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
- Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates