Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
スポンサーリンク
概要
- 論文の詳細を見る
An annealing study of an AlGaN/GaN two-dimensional electron gas structure was conducted in combination with measurements of precise epitaxial layer thickness and AlGaN crystal quality. We found that the sheet resistance ($R_{\text{sheet}}$) increases significantly for samples with a less-than-180-Å-thick AlGaN layer when annealing is performed below the growth temperature. The $R_{\text{sheet}}$ increase also depends on the GaN thickness, which determines AlGaN crystal quality. Hall measurements revealed that the decrease in sheet carrier density is responsible for the $R_{\text{sheet}}$ increase. One possible explanation for the $R_{\text{sheet}}$ increase is that Si donors in poor-surface-morphology AlGaN layers are passivated or compensated from the top surfaces upon annealing. These results have a great impact on wafer selection, device process, design, and performance for short-gate AlGaN/GaN high-electron-mobility transistors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
-
Shigekawa Naoteru
Ntt Photonic Lab. Kanagawa Jpn
-
Shiojima Kenji
Ntt Photonics Laboratories
-
Shiojima Kenji
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
関連論文
- P2-10 SAW-Semiconductor UV Sensor Using GaN Film(Short oral presentation for posters)
- Fern Constituents: Dryocrassy Formate, Sitostanyl Formate and 12α-Hydroxyfern-9(11)-ene from Cyathea podophylla
- Study on Aquatic Fern : Terpenoids of Azolla japonica
- Fern Constituents : Triterpenoids from Adiantum capillus-veneris
- Study on Constituents of Latex : Triterpenoids of Euphorbia tirucalli
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- Anti-carcinogenic Activity of Taraxacum Plant. I
- Anti-tumor-Promoting Activities of Triterpenoids from Ferns. I
- Fern Constituents : Six New Triterpenoid Alcohols from Adiantum capillus-veneris
- Fern Constituents : Adiantum cuneatum. III. Four New Triterpenoids, 4,23-Bisnor-3,4-secofilic-5(24)-en-3-al, 4,23-Bisnor-3,3-dimethoxy-3,4-secofilic-5(24)-ene, 7β, 25-Epoxyfern-9(11)-en-8α-ol and 7α, 8α-Epoxyfernan-25-ol
- Fern Constituents : Adiantum cuneatum. II. Six New Triterpenoids, Neohop-18-en-12α-ol, 13-Epineohop-18-en-12α-ol, Neohop-13(18)-en-19α-ol, Fern-7-en-25-ol, Fern-9(11)-en-25-ol, and Adian-5-en-25-ol
- Fern Constituents : Adiantum cuneatum. I. Three New Triterpenoids, Glaucanol B Acetate, 7β, 25-Epoxyfern-8-ene and 25-Norfern-7-en-10β-yl Formate
- FERN CONSTITUENTS : TWO NEW SECOFILICANE TRITERPENOIDS FROM ADIANTUM CUNEATUM
- Anti-carcinogenic Activity of Taraxacum Plant. II
- FERN CONSTITUENTS : CYCLOHOPENOL AND CYCLOHOPANEDIOL, NOVEL SKELETAL TRITERPENOIDS FROM RHIZOMES OF PYRROSIA LINGUA
- Fern Constituents : Triterpenoids Isolated from Rhizomes of Pyrrosia lingua. I
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
- Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
- Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
- Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
- Inhibitory effects of terpenes on the growth of Staphylococcus aureus
- Study on Aquatic Fern : Terpenoids of Azolla japonica
- Study on Constituents of Latex : Triterpenoids of Euphorbia tirucalli(Natural Medicine Note)
- Chemotaxonomy of Ferns : Triterpenoids and rbcL gene Sequences of Polypodium, Polypodiodes and Goniophlebium
- Fern Constituents : Triterpenoids of Polypodiodes amoena
- DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic Wave Devices
- Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
- Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
- Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
- Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
- Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors