Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
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概要
- 論文の詳細を見る
GaN/Alumina/GaN structures were fabricated to reduce dislocation density in GaN. Alumina films were deposited on GaN templates by electron cyclotron resonance plasma sputtering. GaN was regrown on the alumina films by metalorganic vapor phase epitaxy. It was found that GaN on alumina selectively regrown from pinholes in alumina by annealing prior to GaN regrowth. Hardly any of the dislocations in the GaN template propagated through the interlayer. Most of dislocations were terminated or bent at the interface between the alumina and regrown GaN. On the other hand, new vertical dark lines and horizontal dislocations were generated in regrown layer. The vertical lines were found to correspond to an inversion domain from convergent beam electron diffraction analysis.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Naoki
Depertment of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo, Japan
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Makimōto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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