InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond (Special Issue on High-Frequency/speed Devices in the 21st Century)
スポンサーリンク
概要
- 論文の詳細を見る
Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-μm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.
- 社団法人電子情報通信学会の論文
- 1999-11-25
著者
-
Sano Eiichi
Ntt Network Innovation Laboratories
-
YAMANE Yasuro
NTT Photonics Laboratories
-
Yamane Y
Sharp Corp. Tenri‐shi Jpn
関連論文
- DC Characteristics of InP HBTs under High-Temperature and Bias Stress
- High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
- InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers(Special Issue on Microwave and Millimeter-Wave Module Technology)
- InP-based IC Technologies for Future Lightwave Communication Systems
- 20-Gbit/s Multiplexer and Demultiplexer ICs Using Production-Level Silicon Bipolar Transistors
- 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization